1 edition of Demonstration of a Near and Mid-Infrared Detector Using Multiple Step Quantum Wells found in the catalog.
Demonstration of a Near and Mid-Infrared Detector Using Multiple Step Quantum Wells
by Storming Media
Written in English
|The Physical Object|
Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells. J. Vac. Sci. Technol. 18, MYA Raja, SRJ Brueck, M Osinski, CF Schaus, JG McInerney, TM Brennan and BE Hammons. Resonant Periodic Gain Surface-Emitting Semiconductor Lasers. IEEE S Zhang, W Fan, NC Panoiu, RM Osgood and SRJ The ubiquitous trend toward miniaturized sensing systems demands novel concepts for compact and versatile spectroscopic tools. Conventional optical sensing setups include a light source, an analyte interaction region, and a separate external detector. We present a compact sensor providing room-temperature operation of monolithic surface-active lasers and detectors integrated on the same
DAT-treated CsPb(BrxCl1–x)3 QDs exhibit near unity (∼%) photoluminescence quantum yields, and their blue (∼ nm) LEDs are spectrally stable with an external quantum efficiency of %, a record for perovskite LEDs emitting in the range of – nm relevant to Rec. display standards, and a half-lifetime of ∼99 :// The design, modeling, micro-fabrication, and characterization of an ultra-broadband Ge-on-Si waveguide polarization rotator are presented. The polarization rotator is based on the mode evolution approach where adiabatic symmetric and anti-symmetric tapers are utilized to convert from the fundamental transverse magnetic to electric ://
Proc. SPIE , Vertical-Cavity Surface-Emitting Lasers XVII, (13 March ); doi: / CONFERENCE PROCEEDINGS Papers Presentations Journals. Advanced Photonics Journal of Applied Remote Sensing
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Quantum well infrared photodetectors (QWIP; Gunapala et al., ; Levine, ; Liu et al., ; Rogalski, ), using intersubband absorption in quantum wells, are well-established as a technology and are commercially available in large format focal plane arrays (FPA; Gunapala et al., ), due to a mature and relatively inexpensive III-V epitaxial growth and fabrication :// /quantum-well-infrared-photodetectors.
Demonstration of a near and mid-infrared detector using multiple step quantum wells. By Michael P. Touse. is this thesis a device was designed to ultimately detect a laser designator operating at Ã¦ m and infrared radiation near 10 Ã¦ m simultaneously.
The final design consisted of 25 quantum step wells 80 Ã¦ m wide 4. TITLE AND SUBTITLE Demonstration of a Near and Mid-Infrared Detector Using Multiple Step Quantum Wells 5. FUNDING NUMBERS 6. AUTHOR (S) Michael P.
Touse 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Naval Postgraduate School Monterey, CA 8. PERFORMING ORGANIZATION REPORT NUMBER :// AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions.
However, fabrication of AlGaN/GaN quantum well infrared detectors suffers To reduce the dark current and improve the sensitivity, photodetectors using quantum nanostructures such as quantum wells (QWs) 12,13,14,15,16,17,18,19,20,21,22, quantum dots (QDs) 23,24,25,26,27 A study of intersubband transitions in quantum well infrared detectors working at high temperatures has been reported.
This study allows a greater tunability in the device designs, with the ability to control the peak wavelength, the absorption coefficient, the dark current, the quantum efficiency and the detectivity of the modeled structure operating around μm :// Optical sensing in the mid- and long-wave infrared (MWIR, LWIR) is of paramount importance for a large spectrum of applications including environmental monitoring, gas sensing, hazard detection, food and product manufacturing inspection, and so forth.
Yet, such applications to date are served by costly and complex epitaxially grown HgCdTe quantum-well and quantum-dot infrared A dual-band multiple-quantum-well infrared photodetector capable of simultaneously detecting wavelengths near μm and 10 μm has been fabricated using GaAs/InGaAs step quantum wells.
The In the electromagnetic spectrum, the 'visible' light that humans can see is only a small window spanning – µm in wavelength, corresponding to a frequency band spanning – nt to the visible spectrum in the longer wavelength side is the IR regime (– µm), which is a region of particular interest due to abundant IR light sources associated with thermal emission Disorder-Protected Quantum State Transmission through Helical Coupled-Resonator Waveguides.
JungYun Han, Andrey Sukhorukov, and Daniel Leykam. DOI: /PRJ Received 17 Jun ; Accepted 07 Aug ; Posted 10 Aug View: PDF Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials.
Sumith Bandara, Patrick Maloney Quantum well infrared photodetectors, Long wavelength infrared, Mid-IR, Sensors, Staring arrays, Gallium arsenide, Detector arrays, Infrared radiation, Readout integrated circuits, Metals This is the first demonstration of broadband performance in a single infrared detector using a pillared microstructure in a semiconducting material.
The broadband technology has been demonstrated independently in II-VI and III-V based epitaxial materials. This achievement paves the way to replace multiple cameras with one. It also gives the /advances-in-infrared-detector-array-technology. For the applications in areas such as chemical sensing, gas monitoring and infrared imaging, it would be more desirable to extend the detection wavelength beyond μm.
Longer detection wavelength can be achieved by using Indium-rich InGaAs materials [4–7] or InGaAs/GaAsSb type-II multiple quantum wells (MQW) structures [8–17]. Single-mode, channel, phase-locked laser arrays based on quantum cascade laser technology are demonstrated at multiple spectral bands across the mid-infrared spectrum region.
High peak output power of 50W is achieved around the long-wavelength band of µm, while a side mode suppression ratio over 25dB is ?page=2&perpage= Label-free lipid contrast imaging using non-contact near-infrared photoacoustic remote sensing microscopy.
Pradyumna Kedarisetti, Nathaniel Haven, Brendon Restall, Matthew Martell, and Roger Zemp. DOI: /OL Received 15 May ; Accepted 18 Jul ; Posted 20 1. Introduction. The mid-infrared (mid-IR) spectral range (∼ 3 – 30 μm) shows promise for a range of biomedical applications and is of interest for pharmaceutical applications due to the strong, yet spectrally distinct, absorption features exhibited here by several biomarkers (e.g.
glucose, proteins, lipids, and urea) [1, 2].By taking advantage of such features and through an Quantum Efficiency, Q.E. Quantum efficiency is defined as the fraction of the incident photons that contribute to photocurrent.
It is related to responsivity by: (6) where h= x J-s, is the Planck constant, c=3 x m/s, is the speed of light, q= x C, is the electron charge, R is The benefit of our plasmonic architecture on the detector performance is assessed by comparing it with detectors made using the same quantum well absorbing region, but processed into a standard 45 Search the leading research in optics and photonics applied research from SPIE journals, conference proceedings and presentations, and eBooks Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal infrared spectral regions where no other solution-processed material options exist.
This mini-review collates recent research reports that push the technological envelope of colloidal quantum dot-based photodetectors toward mid- and long-wavelength ://.
A DWELL detector is a smart hybrid of conventional quantum-well (QW) and QD infrared photodetectors. In a heterostructure, InAs QDs are embedded in InGaAs-GaAs multiple QWs, shown in Fig.2 . Just as conventional QD detectors, a DWELL detector is inherently sensitive to normal-incidence radiation and Here, we propose a novel approach to mid-IR spectroscopy based on a mid-infrared wavelength-swept fiber laser, simplifying both the light source and detector requirements.
By identifying a gain material with a broad mid-IR gain bandwidth and using a fast electronically tunable intracavity spectral filter, it is possible to continuously tune the lasers” operating at near-infrared wavelengths1,2.
The extension of such devices to mid-infrared (mid-IR) and Terahertz (THz) wavelengths (λ>10µm) has been re-cently explored, taking advantage of the design ﬂexibil-ity oﬀered by intersubband (ISB) transitions in semicon-ductor quantum wells.
The strong coupling between an